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MTI KOREA Battery Battery R & D - Coin Cell Preparation - Cylindrical and Prismatic Cell Preparation - Pouch Cell Preparation - Battery Test Equipment - Consumables for Battery R&D Synthesis - Thermoelectric Materials - Zinc-Ion Batteries Crystal & Material Crystals Substrates : A-Z Ceramic Substrates : A-Z Thin Film on Substrates : A-Z Metallic substrate :A to Z Nano Powder&Chemical Target / Evaporation : A-Z Thermal Processing Smart Furnaces - Muffle Furnaces (400-1800°C) - Tube Furnaces (1- 7 Zones) - CVD Furnace System - Hi-Pressure & H2 Gas Furnaces & Hot Pressing - RTP Furnaces - Crystal Growth System - Dry Ovens / Hot Plates - Melting and Casting Furnace Accessories Plasma System Plasma Sputtering & Cleaning PECVD Microspheres-Nanospheres Inorganic Organic Magnetic Radioactive Size Standards Sample Preparation & Analysis Cutting / Dicing Saws Polishing Machines Lab Press & Rollers Power & Slurry Mill / Mixer Film Coating Desktop Machine-shop Material Analysis TGA Analysis Battery / Capacitor Analyzers Desk-Top X-Ray Instruments Digital Microscopes Other Lab Equipment Glove Box & Fume Hood Digital Lab Balances Plasma/UV-Zone Cleaners Ultrasonics/Water Circulator UV Equipment & Adhesives Lab Ware / Accessory Sample Handling Gel Sticky Boxes Membrane Film Boxes Round Wafer Carriers IC Tray & Plastic Boxes Vacuum Pen & Tweezers Knowledge Center		Ge,N-type ,Sb & As -doped Crystal.. Crystals Sub.. Ge.. 4" Diameter Wafer Ge,N-type ,Sb & As -doped (11) 등록 제품 : 11개 신상품 상품명 낮은가격 높은가격 제조사 사용후기 조건별 검색 상품명 : Ge Wafer (100) 4" dia x 0.5 mm, 1SP, N type ( Sb doped) R:0.1-0.5 ohm.cm 자체상품코드 : GESba100D05C1-Be 판매가 : Call for Price 상품명 : Ge Wafer (111) 4" dia x 0.5 mm, 1SP, N type ( Sb- doped) with resistivities: 0.014-0.022 Ohms-cm 자체상품코드 : GESbc100D05C1 판매가 : Call for Price 상품명 : Ge Wafer (111) 4" dia x 0.5 mm, 2SP, N type ( Sb- doped)with resistivities: 0.014-0.022 Ohms-cm 자체상품코드 : GESbc100D05C2 판매가 : Call for Price 상품명 : VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 2SP, N type ( As- doped), R: 0.173-0.25 ohm.cm 자체상품코드 : GEAsa100D05C2VGFR0173US 판매가 : Call for Price 상품명 : VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 1SP, N type ( As- doped), R: 0.088- 0.183ohm.cm 자체상품코드 : GEAsa100D05C1VGFR008US 판매가 : Call for Price 상품명 : Ge Wafer (100) 4" dia x 0.5 mm, 2SP, N type ( Sb doped) with Res: 0.029-0.054 ohm-cm 자체상품코드 : GESba100D05C2R0029US 판매가 : Call for Price 상품명 : Ge Wafer (110) 4" dia x 0.5 mm,1SP, N type ( Sb doped) R:1-5 ohm.cm 자체상품코드 : GESbe100D05C1R1US 판매가 : Call for Price 상품명 : Ge Wafer (110) 4" dia x 0.5 mm,2SP, N type ( Sb doped) R:1-5 ohm.cm 자체상품코드 : GESbe101D05C2R1US 판매가 : Call for Price 상품명 : Ge Wafer (110) 4" dia x 0.5 mm,2SP, N type ( Sb doped) R:0.1-0.5ohm.cm 자체상품코드 : GESbe101D05C2R01US 판매가 : Call for Price 상품명 : Ge Wafer (100)with major flat<110> 100mm dia x 0.5 mm, 1SP, N type ( Sb doped) R:0.1-0.5 ohm.cm 자체상품코드 : GESba100D05C1BeR01US 판매가 : Call for Price 상품명 : Ge Wafer (100) 100mm dia x 0.5 mm, 2SP, N type ( Sb doped) R:2.5-2.7 ohm.cm 자체상품코드 : GESba100D05C2BeR2pt5US5 판매가 : Call for Price 1

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