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Ge,N-type ,Sb & As -doped
Ge Wafer (111) 4" dia x 0.5 mm, 2SP, N type ( Sb- doped)with resistivities: 0.014-0.022 Ohms-cm
- Orientation
- (111) +/-0.5 Deg.
- Wafer Size
- 4" dia x 500 microns
- Surface Polishing
- Two sides epi polished
- Surface roughness
- < 8 A ( by AFM )
- Resistivity
- 0.014 - 0.022 Ohms/cm
- Package
- under 1000 class clean room
- Structure
- Cubic, a = 5.6754 Å
- Density
- 5.323 g/cm3 at room temperature
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