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Ge,N-type ,Sb & As -doped
Ge Wafer (100)with major flat<110> 100mm dia x 0.5 mm, 1SP, N type ( Sb doped) R:0.1-0.5 ohm.cm
Ge Wafer Specification
• Growing Method: CZ • Orientation: (100) +/- (0.21-0.25) Deg.
Major Flat: <110> +/- (0.11-0.19) Deg.
• Wafer Size: 100mm dia x 500 microns • Surface Polishing: One side epi polished • Surface roughness: < 5 A ( by AFM) • Doping: Sb Doped • Conductor type: N-type • EPD: <500 /cm^2 • Package: under 1000 class clean room
Typical Properties of Ge Crystal
- • Structure: Cubic, a = 5.6754 A
- • Density: 5.323 g/cm3 at room temperature
- • Melting Point: 937.4 oC
- • Thermal Conductivity: 640
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