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Ge,N-type ,Sb & As -doped
Ge Wafer (100) 4" dia x 0.5 mm, 1SP, N type ( Sb doped) R:0.1-0.5 ohm.cm
- Orientation
- (100) +/-0.5 Deg.
- Wafer Size
- 4" dia x 500 microns
- Surface Polishing
- One side epi polished
- Surface roughness
- < 5 A ( by AFM )
- Resistivity
- 0.1 - 0.5 Ohms.cm
- Package
- under 1000 class clean room
- Structure
- Cubic, a = 5.6754 Å
- Density
- 5.323 g/cm3 at room temperature
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