| |
Ge,N-type ,Sb & As -doped
Ge Wafer (100) 4" dia x 0.5 mm, 2SP, N type ( Sb doped) with Res: 0.029-0.054 ohm-cm
Ge Wafer Specification
• Growing Method: CZ • Orientation: (100) +/-0.5 Deg. • Wafer Size: 4" dia x 500 microns • Surface Polishing: Two sides epi polished • Surface roughness: < 8 A ( by AFM) • Doping: Sb Doped • Conductor type: N-type • Resistivity: 0.029-0.054Ohms/cm • EPD: • Package: under 1000 class clean room
Typical Properties of Ge Crystal
- • Structure: Cubic, a = 5.6754 A
- • Density: 5.323 g/cm3 at room temperature
- • Melting Point: 937.4 oC
- • Thermal Conductivity: 640
|
