| |
Ge,N-type ,Sb & As -doped
Ge Wafer (111) 4" dia x 0.5 mm, 1SP, N type ( Sb- doped) with resistivities: 0.014-0.022 Ohms-cm
- Orientation
- (111) +/-0.5 Deg.
- Wafer Size
- 4" dia x 500 microns
- Surface Polishing
- One side epi polished
- Surface roughness
- < 8 A ( by AFM )
- Resistivity
- 0.014 - 0.022 Ohms-cm
- Package
- under 1000 class clean room
- Structure
- Cubic, a = 5.6754 Å
- Density
- 5.323 g/cm3 at room temperature
|
