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Ge,N-type ,Sb & As -doped
Ge Wafer (100) 100mm dia x 0.5 mm, 2SP, N type ( Sb doped) R:2.5-2.7 ohm.cm
Ge Wafer Specification
- • Growing Method: CZ
- • Orientation: (100) +/- (0.10-0.12) Deg.
- • Major Flat: <110> +/- 0.4 Deg.
- • Wafer Size: 100mm dia x 500 microns
- • Surface Polishing: Two sides epi polished
- • Surface roughness: < 5 A ( by AFM)
- • Doping: Sb Doped
- • Conductor type: N-type
- • Resistivity: 2.5-2.7 Ohm.cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - • EPD: <100 /cm^2
- • Package: under 1000 class clean room
Typical Properties of Ge Crystal
- • Structure: Cubic, a = 5.6754 A
- • Density: 5.323 g/cm3 at room temperature
- • Melting Point: 937.4 oC
- • Thermal Conductivity: 640
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