MTI KOREA Battery
Battery R & D
- Coin Cell Preparation
- Cylindrical and Prismatic Cell Preparation
- Pouch Cell Preparation
- Battery Test Equipment
- Consumables for Battery R&D Synthesis
- Thermoelectric Materials
- Zinc-Ion Batteries
Crystal & Material
Crystals Substrates : A-Z
Ceramic Substrates : A-Z
Thin Film on Substrates : A-Z
Metallic substrate :A to Z
Nano Powder&Chemical
Target / Evaporation : A-Z
Thermal Processing
Smart Furnaces
- Muffle Furnaces (400-1800°C)
- Tube Furnaces (1- 7 Zones)
- CVD Furnace System
- Hi-Pressure & H2 Gas Furnaces & Hot Pressing
- RTP Furnaces
- Crystal Growth System
- Dry Ovens / Hot Plates
- Melting and Casting
Furnace Accessories
Plasma System
Plasma Sputtering & Cleaning
PECVD
Microspheres-Nanospheres
Inorganic
Organic
Magnetic
Radioactive
Size Standards
Sample Preparation & Analysis
Cutting / Dicing Saws
Polishing Machines
Lab Press & Rollers
Power & Slurry Mill / Mixer
Film Coating
Desktop Machine-shop
Material Analysis
TGA Analysis
Battery / Capacitor Analyzers
Desk-Top X-Ray Instruments
Digital Microscopes
Other Lab Equipment
Glove Box & Fume Hood
Digital Lab Balances
Plasma/UV-Zone Cleaners
Ultrasonics/Water Circulator
UV Equipment & Adhesives
Lab Ware / Accessory
Sample Handling
Gel Sticky Boxes
Membrane Film Boxes
Round Wafer Carriers
IC Tray & Plastic Boxes
Vacuum Pen & Tweezers
Knowledge Center
등록 제품 : 9개
-조건선택- -조건선택-
상품명 : Ge Wafer (111) 2" dia x 0.5 mm, 1SP, N type ( Sb doped), resistivities: 0.05-0.5ohm-cm
상품명 : Ge Wafer (111) 2" dia x 0.5 mm, 1SP, P type ( Ga doped), resistivities: 1-20 ohm-cm
상품명 : Ge Wafer (111) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 0.1-1.0 ohm-cm
상품명 : Ge Wafer (111) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), R: 10-20 ohm-cm
상품명 : Ge Wafer (111) 2" dia x 0..5 mm, 2SP, N type ( Sb doped), R: 0.05-0.5 ohm-cm
상품명 : Ge Wafer (111) 2" dia x 0..5 mm, 2SP, N type ( Sb doped), R: 0.005-0.01 ohm-cm
상품명 : Ge Wafer (111) 2" dia x 0.5 mm, 1SP, N type ( Sb doped), resistivities:1-10ohm-cm
상품명 : Ge Wafer (111) 2" dia x 0.5 mm, 1SP, N type ( Sb doped), resistivities: 0.005-0.01ohm.cm
상품명 : Ge Wafer (111) with 9.45 degree miscut , 2" dia x 0.5 mm, 1SP, N type ( Sb doped), resistivities: 0.1-0.5ohm-cm
