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SOS (silicon on Sapphire)
Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:1.0um thick
Silicon EPI Layer:
- • Silicon Orientation: (100)
- • Type, Dopant: Intrinsic type, undoped
- • Silicon Thickness: 1.0 um +/-10%
- • Resistivity: > 100 ohm.cm
- • Micro-particle density ( for particles > 2 um) < 2/cm^2
• R plane -- (1-102) with single flat • Wafer size: 5x5 x 0.46 mm thickness • Front surface: Epi-polished (Ra < = 0.3 nm) • Back surface: Optical grade polish • TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um
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