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SOS (silicon on Sapphire)
Silicon-on-Sapphire (11-02, R Plane ), 10mmx 5mmx0.46 mm,2sp, Film:0.5um thick
Silicon EPI Layer:
- • Silicon Orientation: (100)
- • Type, Dopant: Intrinsic type, undoped
- • Silicon Thickness: 0.5 um +/- 10%
- • Resistivity: > 100 ohm.cm
- • Micro-particle density ( for particles > 2 um) < 2/cm^2
Sapphire Wafer:
- • R plane -- (1-102) with single flat
- • Wafer size: 10x5 x 0.46 mm thickness
- • Front surface: Epi-polished (Ra < = 0.3 nm)
- • Back surface: Optical grade polish
- • TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um
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