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InSb Ge-doped
InSb (100) 5x5x 0.45 mm, P type, Ge doped, 1 side polished
5x5x0.45 mm InSb wafer (P type, Ge doped)
• Size: 10x10x0.45 mm • Orientation <100> +/-0.5o with two reference flats • Polishing: one-side side polishd ( back side etched ) • Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room
Properties
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