| |
InP(111)
InP-VGF Grown (111)B undoped, 2"x0.35 mm wafer, 1sp
InP single crystal wafer
- • Orientation: (111)B
- • Size: 2" diameter x 0.35mm
- • Doping: undoped
- • Conducting type: N Type, Semi-Conducting
- • Resistivity: (2-5)E-1 ohm.cm
- • Carrier Concentration:(3.0-6.0)E15 /c.c.
- • Mobility:3900-4570cm^2/v.s
- • Polish: one side polished
- • Ra(Average Roughness) : < 0.4 nm
- • EPD: N/A
• EPI ready surface and packing
|
|
|
Working days : Monday to Saturday
|
|
|
