| |
InP(111)
InP-VGF Grown (111)A Fe doped, 2"x0.35 mm wafer, 2sp, Semi-insulating
InP single crystal wafer
- • Orientation: (111)A
- • Size: 2" diameter x 0.35mm
- • Doping: Fe doped
- • Conducting type: Semi-Insulating
- • Resistivity:>(0.61-3.25)E7 ohm.cm
- • Mobility:2090-2470 cm^2/v.s
- • Polish: Two sides polished
- • Ra(Average Roughness) : < 0.4 nm
• EPI ready surface and packing
|
|
|
Working days : Monday to Saturday
|
|
|
