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InP(111)
InP-VGF Grown (111)A undoped, 5x5x0.5 mm wafer, 1sp
InP single crystal wafer
- • Orientation: (111)A
- • Size: 5 x 5 x 0.5mm
- • Doping: undoped
- • Conducting type: N Type, Semi-Conducting
- • Resistivity: (2.08-2.34)E^-1 ohm.cm
- • Carrier Concentration:(6.26-7.22)E15 /c.c.
- • Mobility: 4170-4260 cm^2/v.s.
- • Polish: one side polished
- • Ra(Average Roughness) : < 0.4 nm
- • EPD: unable to measure due to (111)A orientation
• EPI ready surface and packing
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Working days : Monday to Saturday
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