| |
InP(111)
InP-VGF Grown (111)A undoped, 2"x0.35 mm wafer, 1sp
InP single crystal wafer
- • Orientation: (111)A
- • Size: 2" diameter x 0.35mm
- • Doping: undoped
- • Conducting type: N Type, Semi-Conducting
- • Resistivity: (2.84-2.99)E^-1 ohm.cm
- • Carrier Concentration:(4.94-5.62)E15 /c.c.
- • Mobility: 3910-4230 cm^2/v.s.
- • Polish: one side polished
- • Ra(Average Roughness) : < 0.4 nm
- • EPD: unable to measure due to (111)A orientation
• EPI ready surface and packing
|
|
|
Working days : Monday to Saturday
|
|
|
