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InP(111)
InP-(VGF- Grown) (111)B S doped, 2"x0.35mm wafer, 1sp
InP single crystal wafer
- • Growing Method: VGF
- • Orientation: (111)B
- • Size: 2" diameter x 0.35 mm
- • Doping: S- doped
- • Conducting type: S-C-N
- • Polish: one side polished
- • Resistivity: (1.26-1.40)x10^-3 ohm.cm
- • Mobility: (1540-1650) cm^2/v.s
- • EPD: N/A
- • Carrier Concentration: (2.71-3.24) x10^18 /cm^3
- • Surface Roughness: <4 nm
• EPI ready surface and packing
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Working days : Monday to Saturday
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