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InP(111)
InP-(VGF- Grown) (111)A Zn- doped, P-type ,2"x (0.3-0.35) mm wafer, 1sp
InP single crystal wafer
- • Growing Method: VGF
- • Orientation: (111)A
- • Size: 2" diameter x (0.3-0.35) mm
- • Doping: Zn- doped
- • Conducting type: S-C-P
- • Polish: one side polished
- • Resistivity:(1.36-1.63)x10^-1 ohm.cm
- • Mobility: 89-93 cm^2/V.S
- • EPD: N/A
- • Carrier Concerntration:(4.3-4.93) x10^17 /cm^3
- • Ra(Average Roughness) : <4 nm
• EPI ready surface and packing
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Working days : Monday to Saturday
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