InP single crystal wafer
• Growing Method: VGF
• Orientation: (100)
• Size: 2" diameter x 0.5 mm
• Doping: S- doped
• Conducting type: S-C-N
• Polish: one side polished
• Resistivity: (1.8-2.0)x10^-3 ohm.cm
• Mobility: 1850-1870 cmE2/V.S
• EPD: <2000 /cmE2
• Carrier Concerntration: (1.7-1.9) x10^18 /cm^3
• Ra(Average Roughness) : < 0.4 nm
• EPI ready surface and packing