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InAs <100> undoped
InAs (100), undoped 30mm dia wafer 1sp
- Specification
- • Growth method LEC
- • Orientation (100) ± 0.5 Deg
- • Orientation Flat <110>
- • Doping Undoped
- • Conductivity type N type
- • Carrier Concentration <3E16 / cm3
- • Mobility >20000 cm2/V.S
- • EPD <5E4 / cm 2
- • Standard thickness 500 ± 20 mm
- • Standard diameter 30 mm
- • Polish one-side
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Working days : Monday to Saturday
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