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InAs <100> undoped
InAs (100), Undoped 2" dia x 0.5mm, one side polished
2" InAs wafer (Ntype)
- • 2" InAs wafer (Undoped, N type)
- • Size: 2" dia x 500 micron +/-25 microns
- • Orientation: <100> +/-0.50
- • Polishing: one-side polishd
- • Packing: in 1000 class clean room with wafer container
Properties
- • Growth method LEC
- • Orientation (100) +/- 0.5 o
- • Doping undoped
- • Conductivity type N type
- • Carrier Concentration (1-3.0) x10^16/ cm3
- • Mobility ~20000 cm 2/Vs
- • Resistivity >=1.0x10^-4 ohm.cm
- • EPD <10000 / cm 2
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Working days : Monday to Saturday
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