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InAs <100> undoped
InAs (100), Undoped, 2" dia x 0.45 mm, two sides polished
- Specification
- • InAs wafer: (Undoped, N type)
- • Size: 2" dia x 450 microns +/-25 microns
- • Orientation: <100> +/-0.50
- • Polishing: two sides polished
- • Growth Method: LEC
- • Major Flat Orientation: <110>
- • Minor Flat Orientation: <-110>
- • Mobility: (20000-22000) cm^2/V.s
- • Carrier Concentration: < 2.1 E16 cm^-3
- • EPD: <30000 /cm^2
- • Packing: in 1000 class clean room with wafer container
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Working days : Monday to Saturday
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