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InAs <100> doped
InAs (100), S-doped 2" dia x 0.5 mm, one side polished,cc:(1-30)E17/ cm^3
2" InAs wafer (Ntype)
• 2" InAs wafer (S-doped, Ntype) • Size: 2" dia x 500 micron +/-25 microns • Orientation: <100> +/-0.50 • Polishing: One-side polishd • Packing: in 1000 class clean room with wafer container
Properties
• Growth method LEC • Orientation (100) +/- 0.5 o • Orientation Flat SEMI • Doping S-doped • Conductivity type N type • Carrier Concentration (1-30)x10^17/ cm3 • EPD <50000 cm^-2
- • Resistivity:
- • Mobility: <10000 cm^2/vs
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