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InAs <100> doped
InAs, (100), Sn doped, N-type, 10m-10m x10mm x 0.5mm 1sp
- Specification
- • Growth method LEC
- • Orientation (100) ± 0.5 Deg
- • Orientation Flat N/A
- • Doping Sn doped
- • Conductivity type N type
- • Carrier Concentration (3-10)E17cm3
- • Mobility >11000 cm2/V.S
- • EPD <15000 / cm 2
- • Standard thickness 500 ± 20 mm
- • Size 10x10 mm
- • Polish one-side
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Working days : Monday to Saturday
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