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InAs <100> doped
InAs (100), P Type, Zn doped 5x5 x 0.5 mm, one side polished
• InAs wafer • P Type, Zn doped
- • Size: 5x5x0.5mm
- • Orientation: <100> +/-0.50
- • Polishing: one-side polishd
- • Resistivities: 0.0084 ohm-cm
- • Packing: in 1000 class clean room with wafer container
Properties
• Growth method LEC • Orientation (100) +/- 0.5 o • Orientation Flat SEMI • Doping Zn doped • Conductivity type P type • Carrier Concentration 5.3E18/ cm3 • Mobility 126 cm2/V.S • Resistivity 0.0084 ohm-cm • EPD 1.2E4 / cm 2
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