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3" Diameter Wafer
Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm
• Growing Method: CZ • Orientation: (100) +/_0.5 Deg. - • Flat: (100) ( or <110>
• Wafer Size: 3" dia x 0.5 mm • Surface Polishing: one side optical polished • Surface finish (RMS or Ra) : < 30A • Doping: Undoped • Conductor type: N-type • Package: under 1000 class clean room in wafer container
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Working days : Monday to Saturday
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