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GaSb undoped
GaSb Wafer (111)-A, undoped,P-type 2"x0.4 mm ,2sp
Wafer Specifications
• Size: 2" diameter x 0.4mm, • Orientation: (111)-A - • Flats: SEMI PF <110>. SF<100>
• Dopping: undoped • Conducting type: P-type. • Polish: A- side EPI Ready ,B-side optical polished - • Resistivity: 6.7x10^-2 ohm.cm
- • Mobility: 610 cm^2/Vs
- • Carrier concentration: 1.5x10^17 ohm.cm
- • EPD : <3x10^3 cm^-2
- • Packing: 1000 class clean room in a single wafer container
- • Surface finish (RMS or Ra) : < 5A
Dopant | Type | Carrier Concentration ( cm-3) | Mobility ( cm2/V.Sec) | Resistivity ( ohm-cm ) | EPD (cm-2) | Undoped | P | 1.0~2.0 x 1017 | 600 ~ 800 | ~0.1 | <10000 | Zn | P+ | 2.0~5.0 x 1018 | 300 ~ 500 | ~0.004 | <10000 | Te | N | 2.0~6.0 x 1017 | 2500 ~ 3500 | ~0.05 | <10000 | High Resistivity | P or N | 1.0~2.0 x 1016 | 460 | ~ 1.0 | <10000 |
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