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GaP (100) Zn-doped
GaP wafer, Zn doped, P type, (100), 2" dia x 0.45 mm, 1sp (carrier conc.:4.0-5.2E17/cc)
- Size
- 2" diameter x 0.45 mm
- Resistivity
- (1.96-1.76)E-1 ohm-cm
- carrier concentration
- (4.0-5.2) E 17/cm^3
- Polished
- one side polished
- Surface finish (RMS or Ra)
- < 8A
- Typical Physical Properties
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| Crystal Structure |
Cubic. a = 5.4505 Å |
| Growth Method |
CZ (LEC) |
| Density |
4.13 g/cm3 |
| Melt Point |
1480 oC |
| Thermal Expansion |
5.3 x 10-6 / oC |
| Dopant |
S doped |
undoped |
| Crystal growth axis |
<111> or <100> |
<100> or <111> |
| Conducting Type |
N |
N |
| Carrier Concentration |
2 ~ 8 x 1017 /cm3 |
4 ~ 6 x 1016 /cm3 |
| Resistivity |
~ 0.03 ohm-cm |
~ 0.3 ohm-cm |
| EPD |
< 3 x 105 |
< 3 x 105 |
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Working days : Monday to Saturday
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