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GaP (100) S-doped
GaP wafer, S doped, (100), 5 x 5 x 0.5 mm, 1sp
- Polished
- One side polished.
- Surface finish (RMS or Ra)
- < 8A
| Typical Physical Properties | Crystal Structure | Cubic. a =5.4505 ?/FONT> | Growth Method | CZ (LEC) | Density | 4.13 g/cm3 | Melt Point | 1480 oC | Thermal Expansion | 5.3 x10-6 / oC | Dopant | S doped | undoped | Crystal growth axis | <111> or <100> | <100> or <111> | Conducting Type | N | N | Carrier Concentration | (2 ~ 12) x1017 /cm3 | 4 ~ 6 x1016 /cm3 | Resistivity | ~ 0.03ohm-cm | ~ 0.3 ohm-cm | EPD | < 3x105 | < 3x105 |
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Working days : Monday to Saturday
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