| |
Doped GaN Template on Sapphire
Si-doped GaN (0001) Epitaxial Templates on Al2O3(0001), N-type, 2” x 5 micron, 2 sp. Concentration: (1E18-1E19)/cc R < 0.02 Ohm-cm
Specification
• Research Grade , about 90 % usable area - • GaN template, N+, 2” in diameter
- • Nominal GaN Thickness: 5 um +/- 1um
- • 2” in Dia, N+(Si-doped)
- • Concentration: ~1E18-1E19/cc
- • Resistivities: < 0.02 Ohm-cm
- • Front side surface: As grown
- • Backside surface: Substrate as received
- • Polarity: Ga-face
- • Substrate:
- • Sapphire Substrate, 2”. C-plane, 1.00 degree offcut toward a plane direction,
- • Both sides polished, DSP or 2sp
- • Growth method: HVPE (Hydride Vapor Phase Epitaxy)
|
