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Doped GaN Template on SapphireSpecification • Research Grade , about 90 % usable area • GaN template, N+, 2” in diameter • Nominal GaN Thickness: 5 um +/- 1um • 2” in dia, N+(Si-doped) • Concentration: ~1E18/cc • Resistivities: < 0.02 Ohm-cm • Front side surface: As grown • Back side surface: Substrate as received • Polarity: Ga-face • Substrate: • Sapphire Substrate, 2”. C-plane, 1.00 degree offcut toward a-plane direction, • Single side polished, 430 um • Growth method: HVPE (Hydride Vapor Phase Epitaxy) • Please click here for the surface data. |
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 Working days : Monday to Saturday 
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