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Undoped GaN Template on SapphireGaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate. Specifications Research Grade
Macro Defect Density: <=10 cm^-2 Lattice Constant Mismatch: 14% mismatch Dislocation Density: 5x10^9/ cm^2
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