GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate.
Specifications
• Sizes 2” Round
• Dimensions50.8mm +/-0.25mm
• Substrate Sapphire, C-plane-(0001) with 0.2 degree miscut toward M-plane
• Conduction Type: N-type,
• Resistivity :N/A
• Front Surface Finish(Ga Face)As-grown
• Back Surface Finish Sapphire as-received finish
• Useable Surface Area >90%
• Edge Exclusion Area 1mm
• Package Single Wafer Container
• GaN layer thickness : 30 microns , (+/- 10%) with roughness: ~10 nm RMS as measured by the Wyko (white light interferometer) for 50 umx50um area
