GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate
Specifications
• Sizes: 5 mm x 5 mm
• Substrate Sapphire, Orientation C (0001) +/- 1 degree
• Conduction Type: N-type
• Resistivity < 0.5 Ohm-cm
• Front Surface Finish (Ga Face) As-Grown
• Back Surface Finish Sapphire as-received finish
• Useable Surface Area >90%
• Edge Exclusion Area 1mm
• Package Single Wafer Container
• GaN layer thickness: 30 microns+/- 10% with roughness: ~10 nm RMS as measured by the Wyko (white light interferometer) for 50 umx50 um area
