GaAs single crystal wafer • Growing Method: VGF
• Orientation: (100)
• Size: 100mm dia x 0.625mm
• Polishing: Two sides polished
• Doping: Zn doped
• Conductor type: S-C-P
• Carrier Concentration: (1.00-1.94) x 10^19 /cm^3
• Mobility: 1 (69-82) cm^2/V.s
• EPD: <5000/cm^2
• Resistivity: (4.67-7.59) x10^-3 ohm.cm
• Ra(Average Roughness) : < 0.4 nm
• Note: EPI ready wafers