GaAs single crystal wafer • Growing Method: VGF
• Orientation: (100)
• Size: 2" dia x 0.35mm
• Polishing: one side polished
• Doping: Zn doped
• Conductor type: S-C-P
• Carrier Concentration: (2.67-3.27) x 10^18 /cm^3
• Mobility: 1 116-125 cm^2/V.S
• EPD: <5000/cm^2
• Resistivity: (1.64-1.88)x10^-2 ohm.cm
• Ra(Average Roughness) : < 0.4 nm
• Note: EPI ready wafers