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GaAs (100) Te-doped
GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP
GaAs single crystal wafer
• Growing Method: VGF
• Orientation: (100) • Size: 10x10 x 0.35 mm • Polishing: one side polished • Doping: Te doped • Conductor type: N-type • Carrier Concentration: (3.04-5.98) x 10^17 /cm^3 • Mobility: (3330-3850) cm^2/V.S • Resistivity: (3.14-5.34) E-3 ohm-cm • EPD: < 5000 /cm^2 - • Note: EPI polishing
- • RMS < 5 Angstrom
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