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SOI Wafer (Silicon On Insulator )
SOI Wafer: 6", 2.5 µm (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped )
- Orientation
- <1-0-0> +/-.5 degree
- Thickness
- 1.0 um +/- 0.1 um
- Type/Dopant
- P Type, B doped
- Orientation
- <1-0-0> +/-.5 degree
- Finish
- As-received (not polished)
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