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GaAs (100) Te-doped

 
  2. GaAs(100)
  3. GaAs (100) Te-doped
 
 
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade

기본 정보
Product Name GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade
Sale Price Call for Price
Product Code GATea(2)50D05C1
Quantity 수량증가수량감소
상품 옵션
 
  •  GaAs single crystal wafer, PRIME Grade
  • Growing Method
  • VGF
  • Orientation
  • (100) 2 degree OFF Toward [101] +/- 0.5 deg
  • Size
  • 2" dia x 0.5 mm
  • Polishing
  • One side polished
  • Doping
  • Te doped
  • Conductor type
  • N-type
  • Carrier Concentration
  • (0.15 - 2.6) E18 /cm3
  • Mobility
  • 2700 ~ 3600 cm2/V.S
  • Resistivity
  • 9E-4 ~ 1.1E-2 ohm-cm
  • EPD
  • < 8000/cm2
  • Note
  • EPI polishing  :  RMS < 5 Angstrom
 
  

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