InAs <100> doped

InAs (100), P Type, Zn doped  2&amp;quot; dia x 0.5 mm, one side polished

InAs (100), P Type, Zn doped 2" dia x 0.5 mm, one side polished

기본 정보
Product Name InAs (100), P Type, Zn doped 2" dia x 0.5 mm, one side polished
Sale Price Call for Price
Product Code IAZa50D05C1-US
Quantity 수량증가수량감소
상품 옵션
 
  •  2" InAs wafer (P type)
  • 2" InAs wafer
    P Type, Zn doped
  • Size
  • 2" dia x 0. 5 mm +/-20 microns
  • Orientation
  • <100> +/-0.5 o
  • Polishing
  • one-side polishd
  • Carrier concentration
  • 1 x 1017 ohm-cm
  • Packing
  • in 1000 class clean room with wafer container
  •  Properties
  • Growth method
  • LEC
  • Orientation
  • (100) +/- 0.5 o
  • Orientation Flat
  • SEMI
  • Doping
  • Zn doped
  • Conductivity type
  • P type
  • Carrier Concentration
  • 5.3E18/ cm3
  • Mobility
  • 126 cm2/V.S
  • Resistivity
  • 0.0084 Ohm-Cm
  • EPD
  • 1.2E4 / cm 2