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InSb Te-doped
InSb (100) 10x10x 0.45 mm, N type, Te doped, 1 side polished
- 10x10x0.45 mm InSb wafer (N type, Te doped)
- Orientation
- <100> +/-0.2 o with two reference flats
- Polishing
- one-side side polishd ( back side etched )
- Packing
- Sealed under nitrogen with single wafer comtainer in 1000 class clean room
- Orientation
- (100) +/- 0.2 o
- Orientation Flat
- Two <010> and <001>
- Carrier Concentration
- (0.19 - 0.5)E18 @77K
- Mobility
- > (3.58 - 5.6)E4 cm2/Vs
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Working days : Monday to Saturday
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