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InP(100) Zn-doped
InP ,Growing Method: VGF(100) Zn doped,3 " x 0.625mm, wafer, 1sp
- Size
- 3" diameter x 0.625 mm
- Resistivity
- (3.1 - 3.7)E-2 ohm.cm
- Mobility
- 62 - 65 cmE2/V.S
- Carrier Concerntration
- (2.6 - 3.2)E+18 /cmE-3
- Ra(Average Roughness)
- < 0.4 nm
- EPI ready surface and packing
Dopant |
Type |
Carrier Concentration (cm-3) |
Mobility (cm2/V.Sec) |
Resistivity (ohm-cm) |
EPD (cm-2) |
Undoped |
N |
0.8 ~ 2.0 x 1015 |
3600 ~ 4000 |
0.03 ~ 0.2 |
5 ~ 6 x 104 |
Sn |
N |
0.5 ~ 1.0 x 1018 0.5 ~ 1.0 x 1018 |
200 ~ 2400 1500 ~ 2000 |
0.001 ~ 0.002 0.0025 ~ 0.007 |
3 ~ 5 x 104 |
Zn |
P |
0.8 ~ 2.0 x 1018 2.5 ~ 4.0 x 1018 |
2500 ~ 3500 1300 ~ 1600 |
0.0025 ~ 0.006 |
1 ~ 3 x 104 |
Fe |
Semi-Insulating |
0.1 ~ 1.0 |
2000 |
107 ~ 108 |
4 ~ 5 x 104 |
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