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2" Wafers <211>

 
  2. 2" Diameter Wafer
  3. 2" Wafers <211>
 
 
Ge Wafer (211) Undoped, 2&amp;quot; dia x 0.45 mm, 1SP, resistivities: &amp;gt;45 ohm-cm

Ge Wafer (211) Undoped, 2" dia x 0.45 mm, 1SP, resistivities: >45 ohm-cm

기본 정보
Product Name Ge Wafer (211) Undoped, 2" dia x 0.45 mm, 1SP, resistivities: >45 ohm-cm
Sale Price Call for Price
Product Code GEU(211)50D045C1
Quantity 수량증가수량감소
상품 옵션
 
  •  Ge Wafer Specification
  • Growing Method
  • CZ
  • Orientation
  • (211) +/_0.5 Deg.
  • Wafer Size
  • 2" dia x 450 microns
  • Surface Polishing
  • one side epi polished
  • Surface roughness
  • < 8 A  ( by AFM )
  • Doping
  • Undoped
  • Conductor type
  • N-type
  • Resistivity
  • > 45 Ohms/cm
  • EPD
  • Package
  • under 1000 class clean room
  •  Typical Properties
  • Structure
  • Cubic,     a = 5.6754 Å
  • Density
  • 5.323 g/cm3 at room temperature
  • Melting Point
  • 937.4 oC
  • Thermal Conductivity
  • 640
 
  

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