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GaP Substrates (111)
GaP Wafer, undoped (111) 2"x0.4 mm, 2sp,Semi-Insulating
- GaP single crystal wafer,Semi-Insulating
- Size
- 2" diameter x 0.4 mm,
- Doping
- undoped, Semi-insulating
- Polished
- two sides polished.
- Surface finish (RMS or Ra)
- < 8A
- Typical Physical Properties
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| Crystal Structure |
Cubic. |
| Growth Method |
CZ (LEC) |
| Density |
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| Mobility |
160 cmE2/Vs |
| Thermal Expansion |
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| Dopant |
undoped |
| Crystal growth axis |
<111> B |
| Conducting Type |
N |
| Carrier Concentration |
3.9 x 109 /cm3 |
| Resistivity |
1E7 ohm.cm |
| EPD |
3.8 x 104 |
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Working days : Monday to Saturday
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