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GaP (100) S-doped
GaP wafer, N type, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm in dia x 0.25 mm, 1sp
- GaP single crystal wafer,
- Size
- 48 mm in diameter x 0.25 mm,
- Orientation
- (100) 2 degree OFF toward [101] +/- 0.5 deg
- Surface finish (RMS or Ra)
- < 8A
- Carrier Concentration
- (0.25 ~ 2.0) E18 / cm3
- Risistivities
- 0.185 ohm-cm
- Typical Physical Properties
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| Crystal Structure |
Cubic. a = 5.4505 Å |
| Growth Method |
CZ (LEC) |
| Density |
4.13 g/cm3 |
| Melt Point |
1480 oC |
| Thermal Expansion |
5.3 x 10-6 / oC |
| Dopant |
S doped |
undoped |
| Crystal growth axis |
<111> or <100> |
<100> or <111> |
| Conducting Type |
N |
N |
| Carrier Concentration |
2 ~ 8 x 1017 /cm3 |
4 ~ 6 x 1016 /cm3 |
| Resistivity |
~ 0.03 ohm-cm |
~ 0.3 ohm-cm |
| EPD |
< 3 x 105 |
< 3 x 105 |
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Working days : Monday to Saturday
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![GaP wafer, N type, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm in dia x 0.25 mm, 1sp](http://www.mtikorea.co.kr/web/product/big/202007/0994ef682ee0050266e4d53fed503980.jpg)
