GaAs (100) Te-doped

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type,  2" dia x 0.485mm, 1sp, Prime Grade

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade

기본 정보
Product Name GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade
Sale Price Call for Price
Product Code GATea(2)50D05C1
Quantity 수량증가수량감소
상품 옵션
 
  •  GaAs single crystal wafer, PRIME Grade
  • Growing Method
  • VGF
  • Orientation
  • (100) 2 degree OFF Toward [101] +/- 0.5 deg
  • Size
  • 2" dia x 0.485 mm
  • Polishing
  • One side polished
  • Doping
  • Te doped
  • Conductor type
  • N-type
  • Carrier Concentration
  • (0.1 - 0.6) x 1018 /cm3
  • Mobility
  • 3500 - 3600 cm2/V.S
  • Resistivity
  • (2.9 - 10.7) E-3 ohm-cm
  • EPD
  • < 8000/cm2
  • Note
  • EPI polishing  :  RMS < 5 Angstrom