A-plane (11-20)

Al2O3 - Sapphire Wafer 2" x0.5 mm,  A plane (11-20), 2 SP

Al2O3 - Sapphire Wafer 2" x0.5 mm, A plane (11-20), 2 SP

기본 정보
Product Name Al2O3 - Sapphire Wafer 2" x0.5 mm, A plane (11-20), 2 SP
Sale Price Call for Price
Product Code ALA50D05C2
Quantity 수량증가수량감소
상품 옵션
 
  •  Features
  • A plane (1-120) sapphire wafer is being used extensively as a substrate for III-V nitrides and magnetic epitaxial films due to its better lattice mismatch
  • Wafer size
  • 2" dia x 0.4 - 0.5 mm thickness
  • Orientaion
  • A plane <11-20> ori.( +-05o) with Standard Flat
  • Polished surface
  • Wafer surface is EPI polished via a special CMP procedure.
  • Package
  • Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.
  •  Typical Properties
  • Crystal Structure
  • Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
  • Melting Point
  • 2040 degree C
  • Density
  • 3.97 gram/cm2
  • Growth Technique
  • CZ
  • crystal purity
  • >99.99 %
  • Hardness
  • 9  (mohs)
  • Thermal Expansion
  • 7.5 x 10-6  (/ oC)
  • Thermal Conductivity
  • 46.06 @ 0 oC
    25.12 @ 100 oC,
    12.56 @ 400 oC  ( W/(m.K) )
  • Dielectric Constant
  • ~ 9.4 @ 300K  at  A axis ~ 11.58 @ 300K  at  C axis
  • Loss Tangent at 10 GHz
  • < 2 x 10-5  at  A axis ,
    < 5 x 10-5  at  C axis