MTI KOREA Battery
Battery R & D
- Coin Cell Preparation
- Cylindrical and Prismatic Cell Preparation
- Pouch Cell Preparation
- Battery Test Equipment
- Consumables for Battery R&D Synthesis
- Thermoelectric Materials
- Zinc-Ion Batteries
Crystal & Material
Crystals Substrates : A-Z
Ceramic Substrates : A-Z
Thin Film on Substrates : A-Z
Metallic substrate :A to Z
Nano Powder&Chemical
Target / Evaporation : A-Z
Thermal Processing
Smart Furnaces
- Muffle Furnaces (400-1800°C)
- Tube Furnaces (1- 7 Zones)
- CVD Furnace System
- Hi-Pressure & H2 Gas Furnaces & Hot Pressing
- RTP Furnaces
- Crystal Growth System
- Dry Ovens / Hot Plates
- Melting and Casting
Furnace Accessories
Plasma System
Plasma Sputtering & Cleaning
PECVD
Microspheres-Nanospheres
Inorganic
Organic
Magnetic
Radioactive
Size Standards
Sample Preparation & Analysis
Cutting / Dicing Saws
Polishing Machines
Lab Press & Rollers
Power & Slurry Mill / Mixer
Film Coating
Desktop Machine-shop
Material Analysis
TGA Analysis
Battery / Capacitor Analyzers
Desk-Top X-Ray Instruments
Digital Microscopes
Other Lab Equipment
Glove Box & Fume Hood
Digital Lab Balances
Plasma/UV-Zone Cleaners
Ultrasonics/Water Circulator
UV Equipment & Adhesives
Lab Ware / Accessory
Sample Handling
Gel Sticky Boxes
Membrane Film Boxes
Round Wafer Carriers
IC Tray & Plastic Boxes
Vacuum Pen & Tweezers
Knowledge Center
등록 제품 : 31개
-조건선택- -조건선택-
상품명 : DyScO3 (001) 10x10x0.5mm 1sp
상품명 : Ga2O3-ß EPI Film ( 400nm) on Sapphire, 10x10x0.5mm
상품명 : 2" dia. InAlAs EPI Film on InP (SI) (100) 2" dia x0.35mm,1sp , EPI layer :300nm thick, undoped In0.52Al0.48As
상품명 : PbTe (100) Purity :99.999% P type, 10x10x1.0 mm, 2sp(60/40)
상품명 : NaBi(WO4)2 substrate , (101) 10x10x1.0 mm, both sides polished (60/40)
상품명 : GaSe (0001) 10x10x1.0 mm, surfaces: cleaved
상품명 : Bi2Se3(0001) (0001) 10x10x1.0 mm, both sides polished (60/40)
상품명 : Au( highly oriented polycrystalline)/Cr coated SiO2/Si substrate ,4"x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Cr=2 nm
상품명 : Zero Diffraction Plate for XRD sample: 24.6 Diax1.0 t mm with Cavity 10 ID x 0.2 mm, Si Crystal, SiZero24D10C1-cavity
상품명 : PbSe (100) N type, 5x5x0.5 mm, 2sp
상품명 : 2" dia. InGaAs EPI Film on InP (SI) (100) Depositied by MOCVD (eg InP:Fe) 2" dia x0.35mm,2sp,Film:500 nm
상품명 : SiO2+TiO2+Pt(111) thin film on Si substrate ,4"x0.525mm,1sp P-type B-doped, (SiO2=300nm,TiO2=20nm ,Pt(111)=150nm)