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New Crystal
Ga2O3-ß EPI Film ( 400nm) on Sapphire, 10x10x0.5mm
- Ga2O3-ß EPI Film (400 nm) on Sapphire, 10 x 10 x 0.5 mm
- Ga2O3-ß EPI Film (400 nm) on Sapphire can be used as new generation LED and UV detector
- Film Sppecifications
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•Chemical composition : Ga2O3-ß
•Film thickness : ~ 400 nm
•Crystalline : textured along (201)
•Growth Method : Spin coating + Annealing
- Substrate Specifications
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•Saphire ( Al2O3 )
•Orientation : <0001>
•Size : 10 x 10 x 0.5 mm
•Polish : one side polished
•Surface roughness : < 5A
- Ga2O3-ß EPI Film UV detecor Ttesting data (click below picture to see details)
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Working days : Monday to Saturday
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