MTI KOREA Battery
Battery R & D
- Coin Cell Preparation
- Cylindrical and Prismatic Cell Preparation
- Pouch Cell Preparation
- Battery Test Equipment
- Consumables for Battery R&D Synthesis
- Thermoelectric Materials
- Zinc-Ion Batteries
Crystal & Material
Crystals Substrates : A-Z
Ceramic Substrates : A-Z
Thin Film on Substrates : A-Z
Metallic substrate :A to Z
Nano Powder&Chemical
Target / Evaporation : A-Z
Thermal Processing
Smart Furnaces
- Muffle Furnaces (400-1800°C)
- Tube Furnaces (1- 7 Zones)
- CVD Furnace System
- Hi-Pressure & H2 Gas Furnaces & Hot Pressing
- RTP Furnaces
- Crystal Growth System
- Dry Ovens / Hot Plates
- Melting and Casting
Furnace Accessories
Plasma System
Plasma Sputtering & Cleaning
PECVD
Microspheres-Nanospheres
Inorganic
Organic
Magnetic
Radioactive
Size Standards
Sample Preparation & Analysis
Cutting / Dicing Saws
Polishing Machines
Lab Press & Rollers
Power & Slurry Mill / Mixer
Film Coating
Desktop Machine-shop
Material Analysis
TGA Analysis
Battery / Capacitor Analyzers
Desk-Top X-Ray Instruments
Digital Microscopes
Other Lab Equipment
Glove Box & Fume Hood
Digital Lab Balances
Plasma/UV-Zone Cleaners
Ultrasonics/Water Circulator
UV Equipment & Adhesives
Lab Ware / Accessory
Sample Handling
Gel Sticky Boxes
Membrane Film Boxes
Round Wafer Carriers
IC Tray & Plastic Boxes
Vacuum Pen & Tweezers
Knowledge Center
등록 제품 : 14개
-조건선택- -조건선택-
상품명 : Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm (부가세 별도)
상품명 : Si Wafer (100), 4 " dia x 0.2 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm (부가세 별도)
상품명 : Si Wafer (100), 4"dia x 0.525 mm, 1SP, N Type, P doped, Resistivities: 1-10 ohm-cm (부가세 별도)
상품명 : Si Wafer (111), Prime Grade, 4 " dia x 0.525 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm - SiAsc101D05C1R0001 (부가세 별도)
상품명 : Si Wafer (111), 4"dia x 0.5-0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm (부가세 별도)
상품명 : Si Wafer (111), 4"dia x 0.45 mm, 1SP, N Type (P doped), resistivity:0.4-0.6ohm-cm (부가세 별도)
상품명 : Si Wafer (100), 4 " dia x 0.525 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm (부가세 포함)
상품명 : Si Wafer (111)with 4 deg. off, 4 " dia x 0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm (부가세 별도)
상품명 : Si Wafer (100), 4 " dia x 0.525 mm, 1SP, N Type ,Sb doped,R:0.01-0.02 ohm.cm (부가세 별도)
상품명 : Si Wafer (111)with 4 deg,off , Prime Grade, 4 " dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm (부가세 별도)
상품명 : Si Wafer (100), 4 " dia x 0.525 mm, 1SP, N Type, P doped, Resistivities: 0.1-1.0 ohm-cm (부가세 별도)
상품명 : Si Wafer (111)+/_4 degree 4 " dia x 0.525 mm, 1SP, N Type (P doped), resistivity: 1-5 ohm-cm