The only pure cubic polytype, 3C-SiC, has many advantages for MOS device applications over the other polytypes due to the smaller band gap.    In addition, the electron Hall mobility is isotropic and higher compared with these of 4H and 6H polytypes [1].    Most important is that this polytype can be grown on silicon substrates hence there is significant.    MTI supplys 3C- SiC film on Silicon upto 8" wafer
 
○    For Surface morphology of on-axis 3C-SiC/Si (100) material,please click here.
○   Please click here to see 3C-SiC physical properties, and comparing difference between 3C, 4H & 6H SiC 
○    3C-SiC growth on Si substrates via CVD :  An introduction -- a good article
○   3C-SiC Main Properties
○   Crystal structure  :  Zinc blende (cubic) ,  see picture on right
○   Lattice constant  :  a = 4.3596 A
○   Dielectric constant (high frequency)  :  6.52 @ 300
○   Density  :  3.166 g cm-3 293 K